| PART |
Description |
Maker |
| DFF2 |
DFF2 is a fast , static, master-slave D flip-flop with 2x drive strngth. SET and RESET are asynchronous and active low
|
austriamicrosystems AG
|
| RSA0K12A1003 RS60K11A9000 RSA0K11A900L |
Master Type（K Fader?/a>
Master Type拢篓K Fader拢漏
|
ALPS ELECTRIC CO.,LTD.
|
| MMC4096 MMC4095 |
(MMC4096) GATED J-K MASTER SLAVE FLIP FLOPS
Gated "J-K" master-slave flip-flops (non invert.)
Gated "J-K" master-slave flip-flop (inverting and non-inverting)
|
Micro Electronics
Microelectronica
|
| AN9DB00 AN9DA00 AN9DE00 AN9FA00 AN9D AN9DC00 AN9DD |
Analog master slice IC series Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR
Analog master slice IC series
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CYK001M16ZCCAU-70BAI CYK001M16ZCCA CYK001M16ZCCAU- |
1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
CAP 1000PF 1000V 5% NP0(C0G) SMD-1812 TR-7 PLATED-NI/SN 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CY7C0430V 7C0430V CY7C0430V-133BGI CY7C0430V-133BG |
3.3V 64K x 18 Synchronous QuadPort⑩ Static RAM
3.3V 64K X 18 SYNCHRONOUS QUADPORT⒙ STATIC RAM
From old datasheet system
3.3V 64K x 18Synchronous QuadPort?Static RAM
|
CYPRESS[Cypress Semiconductor]
|
| IS61LV6424 IS61LV6424-10TQ IS61LV6424-9TQ IS61LV64 |
64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
